Matsumoto Kazuhiko | The Institute Of Scientific And Industrial Research Osaka University
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概要
- MATSUMOTO Kazuhikoの詳細を見る
- 同名の論文著者
- The Institute Of Scientific And Industrial Research Osaka Universityの論文著者
関連著者
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Matsumoto Kazuhiko
The Institute Of Scientific And Industrial Research Osaka University
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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Ohno Yasuhide
The Institute Of Scientific And Industrial Research Osaka University
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Inoue Koichi
The Institute For Solid State Physics University Of Tokyo
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MATSUMOTO Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University
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MAEHASHI Kenzo
The Institute of Scientific and Industrial Research, Osaka University
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Takamura Yuzuru
School Of Chemical Materials Science Japan Advanced Institute Of Science And Technology
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Tamiya E
Graduate School Of Engineering Osaka Univ. 2-1 Yamadaoka Suita Osaka 565-0871 Jpn
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Tamiya Eiichi
Osaka Univ. Osaka Jpn
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TAKAMURA Yuzuru
School of Materials Science, Japan Advanced Institute of Science and Technology
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Tamiya Eiichi
Japan Advanced Institute For Science And Technology Hokuriku
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Takamura Yuzuru
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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KERMAN Kagan
School of Materials Science, Japan Advanced Institute of Science and Technology
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Kerman Kagan
School Of Materials Science Japan Advanced Institute Of Science And Technology
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KERMAN Kagan
Japan Advanced Institute of Science and Technology
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Okamoto Shogo
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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TAMIYA Eiichi
School of Materials Science, Japan Advanced Institute of Science and Technology
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Tamiya Eiichi
School Of Chemical Materials Science Japan Advanced Institute Of Science And Technology
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Tamiya Eiichi
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Kamimura Takafumi
The Institute Of Scientific And Industrial Research Osaka University
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Tsujita Yuichi
The Institute Of Scientific And Industrial Research Osaka University
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OHNO Yasuhide
The Institute of Scientific and Industrial Research, Osaka University
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INOUE Koichi
The Institute of Scientific and Industrial Research, Osaka University
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Katsura Taiji
The Institute Of Scientific And Industrial Research Osaka University
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Chikae Miyuki
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Ohno Yasuhide
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Hakamata Yasufumi
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Matsumoto Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Negishi Ryota
Department of Applied Physics, Osaka University, Suita, Osaka 560-0871, Japan
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Kobayashi Yoshihiro
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
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Matsumoto Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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Tamiya Eiichi
Department of Applied Physics, Graduate School of Engineering, Osaka University
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TSUJITA Yuichi
The Institute of Scientific and Industrial Research, Osaka University
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KWON Hyukchang
School of Materials Science, Japan Advanced Institute of Science and Technology
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KATSURA Taiji
The Institute of Scientific and Industrial Research, Osaka University
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OKUNO Jun
The Institute of Scientific and Industrial Research, Osaka University
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MAEHASHI Kenzo
Osaka University
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YAMAMURA Shohei
Japan Advanced Institute of Science and Technology
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TAKAMURA Yuzuru
Japan Advanced Institute of Science and Technology
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MATSUMOTO Kazuhiko
Osaka University
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TAMIYA Eiichi
Japan Advanced Institute of Science and Technology
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TAMIYA Eiichi
The Institute of Scientific and Industrial Research, Osaka University
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Nakamura T
National Defense Acad. Kanagawa Jpn
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KAMINISHI Daisuke
The Institute of Scientific and Industrial Research, Osaka University
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OZAKI Hirokazu
The Institute of Scientific and Industrial Research, Osaka University
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SERI Yasuhiro
Japan Advanced Institute of Science and Technology
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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NIKI Toshikazu
Ishikawa Seisakusho, Ltd.
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Okuno Jun
The Institute Of Scientific And Industrial Research Osaka University
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Ozaki Hirokazu
The Institute Of Scientific And Industrial Research Osaka University
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Kwon Hyukchang
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Takamura Yuzuru
Japan Advanced Inst. Of Sci. And Technol. Ishikawa Jpn
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Yamamoto Kazuhiro
Crest/jst
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Kaminishi Daisuke
The Institute Of Scientific And Industrial Research Osaka University
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Matsumura Hideki
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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Masuda A
Japan Advanced Institute Of Science And Technology
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FUJIWARA Yasuyuki
The Institute of Scientific and Industrial Research, Osaka University
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Yoshimoto Tomomi
School Of Engineering Hokkaido Tokai University
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Iwata Tatsuo
School Of Engineering Hokkaido Tokai University
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Fujiwara Yasuyuki
The Institute Of Scientific And Industrial Research Osaka University
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Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
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Ohno Yasuhide
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Ohori Takahiro
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Yamamoto Yasuki
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Inoue Koichi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Inoue Koichi
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Sofue Yasuyuki
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Katsura Taiji
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Tsujita Yuichi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Torai Soichiro
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Tamiya Eiichi
Department of Applied Physics, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Hirano Hiroki
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
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Haehashi Kenzo
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Kamimura Takafumi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Iwasaki Shin
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Matsumoto Kazuhiko
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Maeda Masatoshi
Department of Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8577, Japan
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Gumi Kenta
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Asai Yoshihiro
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Negishi Ryota
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
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Iwata Tatsuo
School of Engineering, Hokkaido Tokai University, 5-1-1-1 Minamisawa, Minami-ku, Sapporo 005-8601, Japan
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Ohno Yasuhide
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Maehashi Kenzo
The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Ikuta Takashi
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Zaifuddin Nursakinah
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Miyake Masato
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Greenwood Paul
AIXTRON Ltd., Cambridge CB24 4FQ, United Kingdom
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Teo Kenneth
AIXTRON Ltd., Cambridge CB24 4FQ, United Kingdom
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Fujii Yusuke
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
著作論文
- Microfluidic Amperometric Biochips Based on Carbon Nanotube Arrayed Electrodes
- DNA Aptamer-Based Biosensing of Immunoglobulin E Using Carbon Nanotube Field-Effect Transistors
- High-Sensitive and Label-Free Detection of Biomolecules Using Single-Walled Carbon Nanotube Modified Microelectrodes
- 1B16-5 Label-free electrochemical biosensor based on carbon nanotubes
- Direct Ultrasensitive DNA Sensors Based on Carbon Nanotube Field-Effect Transistors
- Ultrasensitive Detection of DNA Hybridization Using Carbon Nanotube Field-Effect Transistors
- Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
- Position-Controlled Growth of Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition
- External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor
- Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics (Special Issue : Microprocesses and Nanotechnology)
- Microfluidic and Label-Free Multi-Immunosensors Based on Carbon Nanotube Microelectrodes
- Carbon Nanotube Amperometric Chips with Pneumatic Micropumps
- Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators
- Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
- Field-Emission Characteristics of Carbon Nanotube Single Tip Grown on Si Cone
- Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition
- Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes
- Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment
- High-Performance Carbon Nanotube Field-Effect Transistors with Local Electrolyte Gates
- Electrical Heating Process for p-Type to n-Type Conversion of Carbon Nanotube Field Effect Transistors
- Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors
- Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
- Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks
- Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition
- pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)