MATSUMOTO Kazuhiko | Osaka University
スポンサーリンク
概要
関連著者
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MATSUMOTO Kazuhiko
Osaka University
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KAMIMURA Takafumi
Osaka University
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MAEDA Masatoshi
CREST/JST
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KOJIMA Atsuhiko
CREST-JST
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SAKAMOTO Kazue
Meiji University
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Yamamoto Kazuhiro
Crest/jst
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KAWAI Takushi
Meiji University
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MATSUMOTO Kazuhiko
CREST, Japan Science and Technology Agency
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KAMIMURA Takafumi
CREST, Japan Science and Technology Agency
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MAEDA Masatoshi
University of Tsukuba
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Yamamoto Kazuhiro
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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Tamiya E
Graduate School Of Engineering Osaka Univ. 2-1 Yamadaoka Suita Osaka 565-0871 Jpn
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Tamiya Eiichi
Osaka Univ. Osaka Jpn
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MATSUMOTO Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University
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TAKAMURA Yuzuru
School of Materials Science, Japan Advanced Institute of Science and Technology
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KERMAN Kagan
School of Materials Science, Japan Advanced Institute of Science and Technology
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KERMAN Kagan
Japan Advanced Institute of Science and Technology
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MAEHASHI Kenzo
Osaka University
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YAMAMURA Shohei
Japan Advanced Institute of Science and Technology
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TAKAMURA Yuzuru
Japan Advanced Institute of Science and Technology
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TAMIYA Eiichi
Japan Advanced Institute of Science and Technology
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Hyon Chan-kyeong
Crest/jst
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Kerman Kagan
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Tamiya Eiichi
Japan Advanced Institute For Science And Technology Hokuriku
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Takamura Yuzuru
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Takamura Yuzuru
Japan Advanced Inst. Of Sci. And Technol. Ishikawa Jpn
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MURATA Katsuyuki
Olympus Corporation
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MATSUMOTO Kazuhiko
National Institute of Advanced Industrial Science and Technology (AIST)
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Kamimura Takafumi
National Institute Of Advanced Industrial Science And Technology
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Kamimura Takafumi
Osaka University:crest Japan Science And Technology Agency
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HYON Chan
National Institute of Advanced Industrial Science and Technology
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KOJIMA Atsuhiko
National Institute of Advanced Industrial Science and Technology
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HYON Chan
CREST, Japan Science and Technology Agency
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SHIMIZU Mitsuyasu
National Institute of Advanced Industrial Science and Technology
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CHAN Kyeong
CREST, Japan Science and Technology Agency
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Matsumoto Kazuhiko
The Institute Of Scientific And Industrial Research Osaka University
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Kamimura Takafumi
Jst‐crest Saitama Jpn
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Matsumoto Kazuhiko
National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Kojima Atsuhiko
Crest/jst
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Matsumoto Kazuhiko
Osaka University:crest Japan Science And Technology Agency:national Institute Of Advanced Industrial
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Kamimura Takafumi
Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Iwasaki Shin
Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Maeda Masatoshi
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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Maeda Masatoshi
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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Murata Katsuyuki
OLYMPUS Corporation, 2-3-1 Nishi-Shinjuku, Shinjuku, Tokyo 163-0914, Japan
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Kojima Atsuhiko
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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Sakamoto Kazue
Meiji University, 1-1-1 Higashimita, Tama, Kawasaki, Kanagawa 214-8571, Japan
著作論文
- 1B16-5 Label-free electrochemical biosensor based on carbon nanotubes
- n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25eV Ultralow-Energy Ion Beam
- Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV
- Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
- Protein Sensor Using Carbon Nanotube Field Effect Transistor
- Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
- Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
- Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
- Reduction of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors by Refining Process(New System Paradigms for Integrated Electronics)
- n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
- Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process
- Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region