n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
スポンサーリンク
概要
- 論文の詳細を見る
Oxygen ions with the ultralow-energy of 25 eV are implanted in single walled carbon nanotube (SWNT) field-effect transistors (FETs), which convert the SWNT from p-type to n-type. The dose amount ranged from $1.8\times 10^{11}$ to $8.2\times 10^{12}$ ions/cm2. In the drain current–gate voltage characteristic, the hole current begins to decrease while the electron current begins to increase as the dose of the oxygen ions implanted in SWNT-FETs increases. Moreover, the threshold voltage of the hole transport shifted to the negative direction of the gate voltage. These changes in the electrical properties of SWNT-FET after the oxygen-ion implantation correspond to the n-type conversion and to the shift in Fermi level from the valence band edge to the conduction band edge. The implanted oxygen ions may substitute the carbon atoms in the SWNT and act as donor impurities.
- 2005-11-15
著者
-
MATSUMOTO Kazuhiko
Osaka University
-
KAMIMURA Takafumi
Osaka University
-
KAWAI Takushi
Meiji University
-
Kamimura Takafumi
Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
-
Yamamoto Kazuhiro
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
関連論文
- 1B16-5 Label-free electrochemical biosensor based on carbon nanotubes
- n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25eV Ultralow-Energy Ion Beam
- Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV
- Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
- Protein Sensor Using Carbon Nanotube Field Effect Transistor
- Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
- Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
- Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
- Reduction of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors by Refining Process(New System Paradigms for Integrated Electronics)
- n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
- Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process
- Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
- Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor