Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process

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概要

• 論文の詳細を見る

• The new fabrication process for a carbon nanotube (CNT) single-electron transistor (SET) operated at room temperature was proposed using La(NO3)3. The carbon nanotube reacts with oxygen included in La(NO3)3 at high temperature and the defects that worked as tunnel junctions were introduced. For consistency CNT-SET shows Coulomb oscillation and Coulomb diamond characteristics at 300 K. From the simulation, it was found that the newly proposed process introduced three effective defects into CNT, and CNT-SET worked as two islands SET.

• 2008-07-25

著者

• MATSUMOTO Kazuhiko

  Osaka University

• MURATA Katsuyuki

  Olympus Corporation

• KAMIMURA Takafumi

  Osaka University

• MAEDA Masatoshi

  University of Tsukuba

• Iwasaki Shin

  Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Maeda Masatoshi

  University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan

• Murata Katsuyuki

  OLYMPUS Corporation, 2-3-1 Nishi-Shinjuku, Shinjuku, Tokyo 163-0914, Japan

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• Reduction of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors by Refining Process(New System Paradigms for Integrated Electronics)
• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
• Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region

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