Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• MATSUMOTO Kazuhiko

  Osaka University

• MATSUMOTO Kazuhiko

  National Institute of Advanced Industrial Science and Technology (AIST)

• Kamimura Takafumi

  National Institute Of Advanced Industrial Science And Technology

• HYON Chan

  National Institute of Advanced Industrial Science and Technology

• KOJIMA Atsuhiko

  National Institute of Advanced Industrial Science and Technology

• MAEDA Masatoshi

  CREST/JST

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• Nitrogen Doping of Single-Walled Carbon Nanotube by Using Mass-Separated Low-Energy Ion Beams
• Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
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• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
• Gate-Induced Cross-Over between Fabry--Perot Interference and Coulomb Blockade in a Single-Walled Carbon Nanotube Transistor with Double-Gate Structure
• Reduction of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors by Refining Process(New System Paradigms for Integrated Electronics)
• Carbon Nanotube Fabry–Perot Device for Detection of Multiple Single Charge Transitions
• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
• Controlling Direction of Growth of Carbon Nanotubes on Patterned SiO2 Substrate
• Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process
• Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Transition between Particle Nature and Wave Nature in Single-Walled Carbon Nanotube Device
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region

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