Controlling Direction of Growth of Carbon Nanotubes on Patterned SiO2 Substrate
スポンサーリンク
概要
- 論文の詳細を見る
A new technique to preferentially control the direction of the growth of single-walled carbon nanotubes (SWNTs) is proposed. SWNTs are grown by the thermal chemical vapor deposition process on patterned SiO2 substrates with line and space grooves of the order of submicrometers. SWNTs grow along the lower corner of the grooves and are oriented along the direction of the grooves. Further, we propose two modes of SWNT growth along the grooves on the SiO2 substrates: the stick at first mode and the vibration in air mode.
- Japan Society of Applied Physicsの論文
- 2009-01-25
著者
-
Kamimura Takafumi
National Institute Of Advanced Industrial Science And Technology
-
Matsumoto Kazuhiko
National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Matsumoto Kazuhiko
National Institute Of Advanced Industrial Science And Technology
関連論文
- Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
- Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
- Gate-Induced Cross-Over between Fabry--Perot Interference and Coulomb Blockade in a Single-Walled Carbon Nanotube Transistor with Double-Gate Structure
- Carbon Nanotube Fabry–Perot Device for Detection of Multiple Single Charge Transitions
- Nitrogen Doping of Single-Walled Carbon Nanotube by Using Mass-Separated Low-Energy Ion Beams
- Controlling Direction of Growth of Carbon Nanotubes on Patterned SiO2 Substrate
- Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
- Transition between Particle Nature and Wave Nature in Single-Walled Carbon Nanotube Device