Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• MATSUMOTO Kazuhiko

  Osaka University

• Hyon Chan-kyeong

  Crest/jst

• KOJIMA Atsuhiko

  CREST-JST

• KAMIMURA Takafumi

  Osaka University

• MAEDA Masatoshi

  University of Tsukuba

• SAKAMOTO Kazue

  Meiji University

• Kamimura Takafumi

  Jst‐crest Saitama Jpn

• Matsumoto Kazuhiko

  National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Kojima Atsuhiko

  Crest/jst

• Kojima Atsuhiko

  CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

関連論文

• 1B16-5 Label-free electrochemical biosensor based on carbon nanotubes
• First Selective Detection of Proteins Using Top-Gate Carbon Nanotube Field Effect Transistor
• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25eV Ultralow-Energy Ion Beam
• Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV
• Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
• Protein Sensor Using Carbon Nanotube Field Effect Transistor
• Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
• Reduction of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors by Refining Process(New System Paradigms for Integrated Electronics)
• Carbon Nanotube Fabry–Perot Device for Detection of Multiple Single Charge Transitions
• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
• Nitrogen Doping of Single-Walled Carbon Nanotube by Using Mass-Separated Low-Energy Ion Beams
• Controlling Direction of Growth of Carbon Nanotubes on Patterned SiO2 Substrate
• Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process
• Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Transition between Particle Nature and Wave Nature in Single-Walled Carbon Nanotube Device
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
• Protein Sensor Using Carbon Nanotube Field Effect Transistor

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