Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-03-10

著者

• MATSUMOTO Kazuhiko

  Osaka University

• KOJIMA Atsuhiko

  CREST-JST

• MATSUMOTO Kazuhiko

  CREST, Japan Science and Technology Agency

• MAEDA Masatoshi

  CREST/JST

• KAMIMURA Takafumi

  CREST, Japan Science and Technology Agency

• SHIMIZU Mitsuyasu

  National Institute of Advanced Industrial Science and Technology

• CHAN Kyeong

  CREST, Japan Science and Technology Agency

関連論文

• 1B16-5 Label-free electrochemical biosensor based on carbon nanotubes
• First Selective Detection of Proteins Using Top-Gate Carbon Nanotube Field Effect Transistor
• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25eV Ultralow-Energy Ion Beam
• Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV
• Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor
• Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
• Protein Sensor Using Carbon Nanotube Field Effect Transistor
• Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
• Reduction of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors by Refining Process(New System Paradigms for Integrated Electronics)
• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
• Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process
• Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
• Protein Sensor Using Carbon Nanotube Field Effect Transistor
• Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors
• Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor
• Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors

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