Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-05-15

著者

• Yamamoto Kazuhiro

  Crest/jst

• KAMIMURA Takafumi

  Univ. of Tsukuba

• MATSUMOTO Kazuhiko

  CREST, Japan Science and Technology Agency

関連論文

• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25eV Ultralow-Energy Ion Beam
• Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV
• Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
• Nitrogen Doping of Single-Walled Carbon Nanotube by Using Mass-Separated Low-Energy Ion Beams
• Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor
• Protein Sensor Using Carbon Nanotube Field Effect Transistor
• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
• Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
• Protein Sensor Using Carbon Nanotube Field Effect Transistor
• Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors
• Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor
• Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors

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