Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor
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概要
- 論文の詳細を見る
The effects of ultra low nitrogen ion irradiation on room-temperature-operated carbon nanotube channel single-electron transistor have been investigated. The ion irradiation energy was 30 eV and the total number of ions was $2.5\times 10^{14}$ ions/cm2 and $3.7\times 10^{15}$ ions/cm2. After the irradiation, the Coulomb diamonds became larger with increasing in density of irradiated ions. Nitrogen ion irradiation was found to be effective in reducing the quantum dots size in the carbon nanotube channel single-electron transistor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-05-15
著者
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KAMIMURA Takafumi
Univ. of Tsukuba
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MATSUMOTO Kazuhiko
CREST, Japan Science and Technology Agency
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Matsumoto Kazuhiko
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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Kamimura Takafumi
Univ. of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8577, Japan
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Yamamoto Kazuhiro
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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