Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
The air stable n-type carbon nanotube channel filed effect transistor (CNT-FET) with the top gate structure was successfully fabricated using the silicon nitride gate insulator deposited by the thermal chemical vapor deposition. The effects of the silicon nitride insulator on the electrical properties of the CNT-FET have been investigated. The p-type characteristics of the CNT-FET can be converted to the n-type characteristics in high yield of 90% only by depositing the silicon nitride insulator. The drain current is as high as few μA order. The n-type top gate CNT-FET stably operated even in ambient air.
- 2005-02-10
著者
-
KOJIMA Atsuhiko
CREST-JST
-
MATSUMOTO Kazuhiko
CREST, Japan Science and Technology Agency
-
MAEDA Masatoshi
CREST/JST
-
KAMIMURA Takafumi
CREST, Japan Science and Technology Agency
-
SHIMIZU Mitsuyasu
National Institute of Advanced Industrial Science and Technology
-
CHAN Kyeong
CREST, Japan Science and Technology Agency
-
Chan Kyeong
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
-
Kamimura Takafumi
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
-
Maeda Masatoshi
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
-
Kojima Atsuhiko
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
関連論文
- First Selective Detection of Proteins Using Top-Gate Carbon Nanotube Field Effect Transistor
- Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor
- Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
- Protein Sensor Using Carbon Nanotube Field Effect Transistor
- Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
- Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
- Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
- Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
- Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition
- Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
- Protein Sensor Using Carbon Nanotube Field Effect Transistor
- Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors
- Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor
- Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors