Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
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概要
- 論文の詳細を見る
We have succeeded in observing the single hole transistor characteristics in position-controlled grown carbon nanotubes (CNTs) with artificial defects formed by a chemical process. Coulomb blockade characteristics were observed around the hole depletion region even at room temperature. At a low temperature, however, the Coulomb blockade characteristics were observed both in hole and electron transport regions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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MATSUMOTO Kazuhiko
Osaka University
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KAMIMURA Takafumi
Osaka University
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SAKAMOTO Kazue
Meiji University
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Maeda Masatoshi
CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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Sakamoto Kazue
Meiji University, 1-1-1 Higashimita, Tama, Kawasaki, Kanagawa 214-8571, Japan
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