KAMIMURA Takafumi | Osaka University

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概要

• Kamimura Takafumiの詳細を見る
• 同名の論文著者
• Osaka Universityの論文著者

関連著者

• MATSUMOTO Kazuhiko

  Osaka University

• KAMIMURA Takafumi

  Osaka University

• SAKAMOTO Kazue

  Meiji University

• Yamamoto Kazuhiro

  Crest/jst

• KAWAI Takushi

  Meiji University

• MAEDA Masatoshi

  University of Tsukuba

• Yamamoto Kazuhiro

  CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

• Hyon Chan-kyeong

  Crest/jst

• MURATA Katsuyuki

  Olympus Corporation

• KOJIMA Atsuhiko

  CREST-JST

• Kamimura Takafumi

  Osaka University:crest Japan Science And Technology Agency

• MAEDA Masatoshi

  CREST/JST

• Kamimura Takafumi

  Jst‐crest Saitama Jpn

• Matsumoto Kazuhiko

  National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Kojima Atsuhiko

  Crest/jst

• Matsumoto Kazuhiko

  Osaka University:crest Japan Science And Technology Agency:national Institute Of Advanced Industrial

• Kamimura Takafumi

  Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Iwasaki Shin

  Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Maeda Masatoshi

  CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

• Maeda Masatoshi

  University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan

• Murata Katsuyuki

  OLYMPUS Corporation, 2-3-1 Nishi-Shinjuku, Shinjuku, Tokyo 163-0914, Japan

• Kojima Atsuhiko

  CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

• Sakamoto Kazue

  Meiji University, 1-1-1 Higashimita, Tama, Kawasaki, Kanagawa 214-8571, Japan

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著作論文

• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25eV Ultralow-Energy Ion Beam
• Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV
• Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
• Reduction of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors by Refining Process(New System Paradigms for Integrated Electronics)
• n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
• Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process
• Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region

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