Relaxation Mechanisms of Electronic States in CdSe/ZnSe Quantum Dots Studied by Selectively Excited Photoluminescence Measurements : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 2002-12-15
著者
-
MAEHASHI Kenzo
The Institute of Scientific and Industrial Research, Osaka University
-
INOUE Koichi
The Institute of Scientific and Industrial Research, Osaka University
-
Inoue K
The Institute Of Scientific And Industrial Research Osaka University
-
Maehashi K
The Institute Of Scientific And Industrial Research Osaka University
-
Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
-
Nakashima Hiroshi
Department Of Preventive Medicine And Public Health National Defense Medical College
-
MURASE Yasuhiro
The Institute of Scientific and Industrial Research, Osaka University
-
NAKASHIMA Hisao
Hyogo University
-
Nakashima H
Hyogo University
-
Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
-
Inoue Koichi
The Institute For Solid State Physics University Of Tokyo
関連論文
- Premix-PICT 拡散法で作製したMgB_2超伝導バルク体の臨界電流特性に及ぼす微細組織の影響
- V添加10Crフェライト鋼におけるラス境界析出物の3D電子線トモグラフィー観察
- W03(2) 超微細粒金属材料の粒界原子構造と力学的性質(【W03】超強加工による超微細粒金属の組織と強度)
- AIC法による低温多結晶シリコン薄膜形成挙動の微細構造解析(TFTの材料・デバイス技術・応用及び一般)
- アルミニウム誘起結晶化法による多結晶シリコン薄膜形成挙動のその場加熱観察
- MgB_2多結晶バルク体の力学特性
- α-アルミナ単結晶における破面の3D電子線トモグラフィー観察
- 電子線トモグラフィーによる結晶材料組織の3次元可視化
- FIBによる生体硬組織薄膜化とTEM観察
- Effects of SO_2 on Respiratory System of Adult Miyakejima Resident 2 Years after Returning to the Island
- Toxicity of Silicon Compounds in Semiconductor Industries
- Premix-PICT 拡散法で作製したMgB_2バルク体のJ_c特性と微細組織
- MgB_2多結晶バルク体の粒界性格の解析
- 薄片化したα-アルミナの応力拡大係数と亀裂進展挙動
- Oral Toxicity of Bismuth in Rat : Single and 28-Day Repeated Administration Studies
- A 13-Week Toxicity Study of Bismuth in Rats by Intratracheal Intermittent Administration
- 電子線トモグラフィーによる格子欠陥の3次元可視化
- 超強加工された純銅の粒界構造
- コイルばねクリープ試験法によるSn系はんだ合金の低応力域における高温変形挙動
- In-situ Observation of Dislocation Motion and Its Mobility in Fe-Mo and Fe-W Solid Solutions at High Temperatures
- MgB_2/B多層膜の作製と超伝導特性
- 組成を変化させて作製したMgB_薄膜の超伝導特性
- MgB_2/Ni多層膜のJ_c-B特性
- MgB_2/B多層膜のJ_cの磁場依存性
- 6000系アルミニウム合金の立方体方位粒形成過程
- Microfluidic Amperometric Biochips Based on Carbon Nanotube Arrayed Electrodes
- DNA Aptamer-Based Biosensing of Immunoglobulin E Using Carbon Nanotube Field-Effect Transistors
- High-Sensitive and Label-Free Detection of Biomolecules Using Single-Walled Carbon Nanotube Modified Microelectrodes
- Direct Ultrasensitive DNA Sensors Based on Carbon Nanotube Field-Effect Transistors
- Ultrasensitive Detection of DNA Hybridization Using Carbon Nanotube Field-Effect Transistors
- 電子ビーム蒸着法で作製したMgB_2薄膜の微細組織の組成依存性
- Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
- 組成を変化させて作製したMgB_薄膜の超伝導特性
- 18Cr-9Ni-3Cu-Nb-N鋼のクリープ変形に伴う組織変化とそのクリープ破壊への影響(力学特性)
- 431 高Cr実用フェライト系耐熱鋼の応力急変試験によるクリープ変形挙動評価(余寿命と寿命延伸,高温機器・材料の損傷検出・評価・余寿命推定,オーガナイスドセッション2)
- 722 コイルばねクリープ試験法による鉛フリーはんだの低応力挙動解析(測定,一般セッション)
- ScとZrを複合添加したAl-Mg-Si系合金熱間圧延板に形成する析出物の形態
- 2種類の回折条件を用いた転位組織の3次元可視化
- Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
- Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces
- Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
- Optical Spectra of Oriented (SN)_x Film Measured by Synchrotron Radiation
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
- Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Association of Thoracic Kyphosis with Subjective Poor Health, Functional Activity and Blood Pressure in the Community-Dwelling Elderly
- In Vitro Solubility and In Vivo Toxicity of Indium Phosphide
- Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
- Multiexponential and Spectral Analysis of Carrier Emission Processes from Co-Related Deep Levels in p-Silicon
- Urinary Excretion of an Oxidative Stress Marker, 8-hydroxyguanine (8-OH-Gua), among Nickel-cadmium Battery Workers
- Toxicity of Fire Decomposition Products of New Fire Extinguishing Agent, 1, 1, 1, 2, 3, 3, 3-Heptafluoropropane
- Acute and Subacute Inhalation Toxicity of Highly Purified Phosphine (PH_3) in Male ICR Mice
- Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
- Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
- Relaxation Mechanisms of Electronic States in CdSe/ZnSe Quantum Dots Studied by Selectively Excited Photoluminescence Measurements : Semiconductors
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis
- Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
- Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs (110) Substrates by Molecular Beam Epitaxy
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Molecular Beam Epitaxial Growth of ZnSe Films on Vicinal GaAs(110) Substrates
- Annealing Behavior of Deep Trap Level in p-GaTe
- Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
- Electronic Structures of Porous Si Studied by Core-Level Absorption and Photoemission Spectroscopy
- Charge-Balanced Heteroepitaxial Growth of GaAs on Si
- Spectral and Spatial Behavior of Raman Scattering and Photoluminescence from Porous Silicon
- Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates
- Position-Controlled Growth of Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition
- External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor
- Diffusion of Electrically-Active Cobalt in Silicon
- Structural Changes at Glass-Transition in Ge_xSe_ Studied by Raman Scattering
- Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
- Al Growth on Si(111)(√×√)-Ga Surfaces at Room Temperature
- Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films
- Robust Noise Modulation of Nonlinearity in Carbon Nanotube Field-Effect Transistors
- Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics (Special Issue : Microprocesses and Nanotechnology)
- Microfluidic and Label-Free Multi-Immunosensors Based on Carbon Nanotube Microelectrodes
- Carbon Nanotube Amperometric Chips with Pneumatic Micropumps
- Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators
- Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
- Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition
- Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes
- Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment
- High-Performance Carbon Nanotube Field-Effect Transistors with Local Electrolyte Gates
- Electrical Detection of Negatively Charged Proteins Using n-Type Carbon Nanotube Field-Effect Transistor Biosensors
- Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors
- Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
- Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks
- pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array
- Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)