Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-01-15
著者
-
MAEHASHI Kenzo
The Institute of Scientific and Industrial Research, Osaka University
-
Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
-
NAKASHIMA Hisao
The Institute of Scientific and Industrial Research, Osaka University
-
Bertram Frank
Fakaltat Fur Naturwissenschaften Otto-von-guericke Universitat Magdeburg Universitatplatz
-
VEIT Peter
Fakaltat fur Naturwissenschaften, Otto-von-Guericke Universitat Magdeburg, Universitatplatz
-
CHRISTEN Jurgen
Fakaltat fur Naturwissenschaften, Otto-von-Guericke Universitat Magdeburg, Universitatplatz
-
Christen Jurgen
Fakaltat Fur Naturwissenschaften Otto-von-guericke Universitat Magdeburg Universitatplatz
-
Veit P
Otto‐von‐guericke‐univ. Magdeburg Magdeburg Deu
-
Nakashima Hisao
The Institute Of Scientific And Industrial Research Osaka University
関連論文
- Microfluidic Amperometric Biochips Based on Carbon Nanotube Arrayed Electrodes
- DNA Aptamer-Based Biosensing of Immunoglobulin E Using Carbon Nanotube Field-Effect Transistors
- High-Sensitive and Label-Free Detection of Biomolecules Using Single-Walled Carbon Nanotube Modified Microelectrodes
- Direct Ultrasensitive DNA Sensors Based on Carbon Nanotube Field-Effect Transistors
- Ultrasensitive Detection of DNA Hybridization Using Carbon Nanotube Field-Effect Transistors
- Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
- Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces
- Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
- Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
- Relaxation Mechanisms of Electronic States in CdSe/ZnSe Quantum Dots Studied by Selectively Excited Photoluminescence Measurements : Semiconductors
- Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)(√ x √)-Al Surface
- Si (111)(√×√)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy
- Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs (110) Substrates by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth of ZnSe Films on Vicinal GaAs(110) Substrates
- Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
- Electronic Structures of Porous Si Studied by Core-Level Absorption and Photoemission Spectroscopy
- Charge-Balanced Heteroepitaxial Growth of GaAs on Si
- Spectral and Spatial Behavior of Raman Scattering and Photoluminescence from Porous Silicon
- Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates
- Position-Controlled Growth of Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition
- Growth Temperature Dependence of InAs ISlands Grown on GaAs (001) Substrates
- External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor
- Al Growth on Si(111)(√×√)-Ga Surfaces at Room Temperature
- Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films
- Robust Noise Modulation of Nonlinearity in Carbon Nanotube Field-Effect Transistors
- Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics (Special Issue : Microprocesses and Nanotechnology)
- Microfluidic and Label-Free Multi-Immunosensors Based on Carbon Nanotube Microelectrodes
- Carbon Nanotube Amperometric Chips with Pneumatic Micropumps
- Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators
- Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
- Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition
- Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes
- Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment
- High-Performance Carbon Nanotube Field-Effect Transistors with Local Electrolyte Gates
- Electrical Detection of Negatively Charged Proteins Using n-Type Carbon Nanotube Field-Effect Transistor Biosensors
- Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors
- Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions
- Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks
- pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array
- Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor
- Direct Electrical Detection of DNA Hybridization Based on Electrolyte-Gated Graphene Field-Effect Transistor (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)