Nakashima Hisao | The Institute Of Scientific And Industrial Research Osaka University

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概要

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著作論文

Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces
Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)(√ x √)-Al Surface
Si (111)(√×√)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy
Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs (110) Substrates by Molecular Beam Epitaxy
Molecular Beam Epitaxial Growth of ZnSe Films on Vicinal GaAs(110) Substrates
Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
Electronic Structures of Porous Si Studied by Core-Level Absorption and Photoemission Spectroscopy
Charge-Balanced Heteroepitaxial Growth of GaAs on Si
Spectral and Spatial Behavior of Raman Scattering and Photoluminescence from Porous Silicon
Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates
Growth Temperature Dependence of InAs ISlands Grown on GaAs (001) Substrates
Al Growth on Si(111)(√×√)-Ga Surfaces at Room Temperature

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