TADA Yoko | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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SUZUKI Kunihiro
Fujitsu Laboratories Ltd.
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TADA Yoko
Fujitsu Laboratories Ltd.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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Suzuki Kunihiro
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Aoyama T
Hitachi Ltd. Ibaraki Jpn
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Suzuki K
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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AOYAMA Takahiro
Daihen Co.
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Suzuki K
Department Of Information And Communication Technology Tokai University
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Tada Y
Fujitsu Laboratories Ltd.
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KATAOKA Yuji
Fujitsu Laboratories Ltd.
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Suzuki Kenji
Institute For Materials Research Laboratory Tohoku University
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Suzuki K
Central Research Laboratory Alps Electric Co. Ltd.
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Suzuki Kenshu
Division Of Public Health Department Of Social Medicine Nihon University School Of Medicine
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TASHIRO Hiroko
Fujitsu Laboratories Ltd.
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Tashiro H
Research And Development Center Ricoh Company Ltd.
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Suzuki K
東京大学大学院農学生命科学研究科獣医病理学研究室
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Tashiro Hideo
Riken
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HORIUCHI Kei
Fujitsu Laboratories Ltd.
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Horiuchi K
Fujitsu Laboratories Ltd.
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Horiuchi Kei
Fujitsu Laboratories
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Kataoka Y
Toshiba Corp. Yokohama Jpn
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ARIMOTO Hiroshi
Fujitsu Laboratories Ltd.
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ARIMOTO Hiroshi
Semiconductor Leading Edge Technologies
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Arimoto H
Semiconductor Leading Edge Technologies Inc.
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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OHKUBO Satoshi
Fujitsu Laboratories Ltd.
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SATOH Akira
FUJITSU LABORATORIES LTD.
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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NAMURA Itaru
Fujitsu Laboratories Ltd.
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INOUE Fumihiko
Fujitsu Laboratories Ltd.
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Ohkubo Shuichi
Ulsi Technology Laboratory Fujitsu Laboratories Ltd.
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NAKASHIMA Hisao
The Institute of Scientific and Industrial Research, Osaka University
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FUKUTOME Hidenobu
Fujitsu Laboratories Ltd.
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HASEGAWA Sigehiko
The Institute of Scientific and Industrial Research, Osaka University
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Fukutome Hidenobu
Fujitsu Laboratories Ltd. Silicon Technologies Laboratories Advanced Cmos Technology Lab.
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Hasegawa Sigehiko
The Institute Of Scientific And Industrial Research Osaka University
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Nakashima Hisao
The Institute Of Scientific And Industrial Research Osaka University
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Aoyama Takayuki
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Kojima Shuichi
Fujitsu LSI Technology, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Kataoka Yuji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Kataoka Yuji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Itani Tsukasa
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Nagayama Tsutomu
Nissin Ion Equipment Co., Ltd., 575 Kuze-Tonoshiro-cho, Minami-ku, Kyoto 601-8205, Japan
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Nagayama Susumu
Nano Science Corporation, 7F Sumitomo Bldg., 1-10-1 Higashi Ikebukuro, Toshima, Tokyo 170-0013, Japan
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Inoue Fumihiko
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Suzuki Kunihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
著作論文
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si1-xGex Substrate Based on the Theory
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide