Kataoka Y | Toshiba Corp. Yokohama Jpn

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概要

• KATAOKA Yujiの詳細を見る
• 同名の論文著者
• Toshiba Corp. Yokohama Jpnの論文著者

関連著者

• KATAOKA Yuji

  Fujitsu Laboratories Ltd.

• Kataoka Y

  Toshiba Corp. Yokohama Jpn

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

• Aoyama T

  Hitachi Ltd. Ibaraki Jpn

• AOYAMA Takayuki

  Fujitsu Laboratories Lid.

• Suzuki K

  School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science

• TADA Yoko

  Fujitsu Laboratories Ltd.

• Suzuki K

  Department Of Information And Communication Technology Tokai University

• Suzuki Kenshu

  Division Of Public Health Department Of Social Medicine Nihon University School Of Medicine

• AOYAMA Takahiro

  Daihen Co.

• Suzuki K

  Ntt Transmission Systems Laboratories Lightwave Communications Laboratory

• Suzuki K

  Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn

• Tada Y

  Fujitsu Laboratories Ltd.

• Suzuki Kunihiro

  Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• Yabe Aya

  Department Of Molecular Biology Institute Of Gerontology Nippon Medical School

• Tamura H

  R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.

• FUJII Toshio

  Fujitsu Laboratories Ltd.

• Suzuki Kenji

  Institute For Materials Research Laboratory Tohoku University

• Suzuki K

  Central Research Laboratory Alps Electric Co. Ltd.

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• TASHIRO Hiroko

  Fujitsu Laboratories Ltd.

• ARIMOTO Hiroshi

  Fujitsu Laboratories Ltd.

• HORIUCHI Kei

  Fujitsu Laboratories Ltd.

• SATOH Akira

  FUJITSU LABORATORIES LTD.

• SUGII Toshihiro

  FUJITSU LABORATORIES LTD.

• NAMURA Itaru

  Fujitsu Laboratories Ltd.

• INOUE Fumihiko

  Fujitsu Laboratories Ltd.

• TAMURA Hirotaka

  Fujitsu Laboratory Ltd.

• ISHIKAWA Hideaki

  Fujitsu Laboratories Ltd.

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Ishikawa T

  Fujitsu Laboratories Ltd.

• Yoshida Akira

  First Department Of Internal Medicine University Of Fukui

• YOSHIDA Chikako

  Fujitsu Laboratories Ltd.

• YOSHIDA Akira

  Fujitsu Limited

• FUJIMAKI Norio

  Fujitsu Limited

• ARIMOTO Hiroshi

  Semiconductor Leading Edge Technologies

• Horiuchi K

  Fujitsu Laboratories Ltd.

• Horiuchi Kei

  Fujitsu Laboratories

• Tashiro H

  Research And Development Center Ricoh Company Ltd.

• Fujimaki N

  National Inst. Of Information And Communications Technol. Kobe Jpn

• Fujimaki Norio

  Fujitsu Laboratories Ltd

• Yokoyama N

  Fujitsu Laboratories Ltd.

• Suzuki K

  東京大学大学院農学生命科学研究科獣医病理学研究室

• Tamura Hitoshi

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Tamura Hirotaka

  Fujitsu Laboratories Ltd.

• Arimoto H

  Semiconductor Leading Edge Technologies Inc.

• Arimoto Hiroshi

  Fujitsu Laboratories Limited

• Tamura Hideki

  Faculty Of Eng. Yamagata Univ.

• Yokoyama Naoki

  Institute For Nano Quantum Information Electronics The University Of Tokyo

• Tashiro Hideo

  Riken

• Yoshida Akira

  Fujitsu Laboratories Ltd.

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• SASA Shigehiko

  Fujitsu Laboratories Ltd.

• サンドゥー アダルシュ

  東工大

• Sandhu A

  Fujitsu Laboratories Ltd.

• Sandhu Adarsh

  Fujitsu Laboratories Limited

• ANDO Hideyasu

  Fujitsu Laboratories Ltd.

• TOMIOKA Takeshi

  Fujitsu Laboratories Ltd.

• BAMBA Yasuo

  Fujitsu Laboratories Ltd.

• ISHII Kazuaki

  Fujitsu Laboratories Ltd.

• Yoshida A

  Toyohashi Univ. Technol. Toyohashi Jpn

• Bamba Y

  Fujitsu Laboratories Ltd.

• Bamba Yasuo

  Fujitsu Laboratories Limited

• Ando H

  Toshiba Corp. Kawasaki Jpn

• Tamura H

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

• Tamura Hitomi

  Network Design Research Center Kyushu Institute Of Technology

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著作論文

• High Tilt Angle Ion Implantation into Polycrystalline Si Gates
• Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
• Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
• Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
• Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
• Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
• Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure

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