ENDOH Akira | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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ENDOH Akira
Fujitsu Laboratories Ltd.
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MIMURA Takashi
Fujitsu Laboratories Lid.
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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Hiyamizu Satoshi
Graduate School Of Engineering Science Osaka University
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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MATSUI Toshiaki
Communication Research Laborator
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Hiyamizu S
Osaka Univ. Osaka Jpn
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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Hikosaka K
Fujitsu Lab. Ltd. Kanagawa Jpn
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Hirose Nobumitsu
National Inst. Of Information And Communications Technology
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Higashiwaki M
National Institute Of Information And Communications Technology
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SHINOHARA Keisuke
National Institute of Info. & Com. Tech.
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HIGASHIWAKI Masataka
Communications Research Laboratory
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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HIGASHIWAKI Masataka
Graduate School of Engineering Science, Osaka University
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Shimomura S
Graduate School Of Science And Engineering Ehime University
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Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Ikeda Keiji
Fujitsu Laboratories Ltd.
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Muto S
Kek Ibaraki
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Fujii Toshio
Fujitsu Laboratories Lid.
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WATANABE Issei
National Institute of Info. & Com. Tech.
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KITADA Takahiro
Osaka University
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HIROSE Nobumitsu
National Institute of Information and Communications Technology
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SHINOHARA Keisuke
Communications Research Laboratory
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Arimoto H
Fujitsu Lab. Ltd. Atsugi Jpn
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Kitada Tadayoshi
Institute Of Technology And Science University Of Tokushima
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Shinohara K
National Institute Of Info. & Com. Tech.
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KITADA Hideki
Fujitsu Laboratories Ltd
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Matsui Toshiaki
Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Endoh Akira
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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TAKATSU Motomu
Fujitsu Laboratories Ltd.
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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KATAOKA Yuji
Fujitsu Laboratories Ltd.
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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TACKEUCHI Atsushi
Fujitsu Laboratories Ltd.
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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Kataoka Y
Toshiba Corp. Yokohama Jpn
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武藤 真三
山梨大学
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FUJII Toshio
Fujitsu Laboratories Ltd.
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SHIMOMURA Satoshi
Graduate School of Engineering Science, Osaka University
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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YAMAGUCHI Yasuhiro
Fujitsu Laboratories Ltd.
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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ARIMOTO Hiroshi
Fujitsu Laboratories Ltd.
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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Ishikawa T
Fujitsu Laboratories Ltd.
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TOMIOKA Takeshi
Fujitsu Laboratories Ltd.
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BAMBA Yasuo
Fujitsu Laboratories Ltd.
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ISHII Kazuaki
Fujitsu Laboratories Ltd.
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SHIMOMURA Satoshi
Osaka University
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HIYAMIZU Satoshi
Osaka University
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HIGASHIWAKI Masataka
the Graduate School of Engineering Science, Osaka University
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HIYAMIZU Satoshi
the Graduate School of Engineering Science, Osaka University
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KITADA Takahiro
Graduate School of Engineering Science, Osaka University
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AOKI Toyohiro
Graduate School of Engineering Science, Osaka University
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Nakata Y
Fujitsu Laboratories Ltd.
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Bamba Y
Fujitsu Laboratories Ltd.
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Bamba Yasuo
Fujitsu Laboratories Limited
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Aoki Toyohiro
Graduate School Of Engineering Science Osaka University
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Yokoyama N
Fujitsu Laboratories Ltd.
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Kawano Akihiro
Fujitsu Laboratories Ltd.
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Watanabe Issei
National Institute Of Information And Communications Technology (nict)
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Mimura T
National Institute Of Information And Communications Technology
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Kitada H
Fujitsu Laboratories Ltd
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Yamaguchi Yasuhiro
Fujitsu Laboratories Ltd
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Yamaguchi Yasuhiro
Fujitsu Laboratories Lid.
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Tackeuchi A
Department Of Applied Physics Waseda University
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Matsui Toshiaki
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Shinohara Keisuke
Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Shinohara Keisuke
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Watanabe Issei
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Higashiwaki Masataka
Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Ikeda Keiji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Hikosaka Kohki
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Hiyamizu Satoshi
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
著作論文
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
- DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
- Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
- Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- Improved Electron Mobility of Two-Dimensional Electron Gas Formed Area-Selectively in GaAs/AlGaAs Heterostructure by Focused Si Ion Beam Implantation and MBE Overgrowth
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators