Mimura T | National Institute Of Information And Communications Technology

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著作論文

264 MHz HTS Lumped Element Bandpass Filter(Special Issue on Superconductive Devices and Systems)
Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
Selective Dry Etching of AlGaAs-GaAs Heterojunction
AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations

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