Watanabe Issei | National Institute Of Information And Communications Technology (nict)

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概要

• WATANABE Isseiの詳細を見る
• 同名の論文著者
• National Institute Of Information And Communications Technology (nict)の論文著者

関連著者

• Endoh A

  Fujitsu Lab. Ltd. Atsugi Jpn

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• Watanabe Issei

  National Institute Of Information And Communications Technology (nict)

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Endoh Akira

  National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn

• WATANABE Issei

  National Institute of Info. & Com. Tech.

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• SHINOHARA Keisuke

  National Institute of Info. & Com. Tech.

• KITADA Takahiro

  Osaka University

• SHIMOMURA Satoshi

  Osaka University

• HIYAMIZU Satoshi

  Osaka University

• Mimura T

  National Institute Of Information And Communications Technology

• Kitada Tadayoshi

  Institute Of Technology And Science University Of Tokushima

• Shinohara K

  National Institute Of Info. & Com. Tech.

• MIMURA Takashi

  National Institute of Information and Communications Technology

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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著作論文

• Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
• E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
• Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations

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