Endoh A | Fujitsu Lab. Ltd. Atsugi Jpn

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著作論文

Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations

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