MIMURA Takashi | National Institute of Information and Communications Technology

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"
Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors

もっと見る

スポンサーリンク