High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
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概要
- 論文の詳細を見る
We fabricated 60-nm-gate InAlN/GaN heterostructure field-effect transistors (HFETs), which had a 6-nm-thick InAlN barrier with an Al composition of 0.86. The devices had a maximum drain current density of 1.34 A/mm and a maximum extrinsic transconductance of 389 mS/mm. The small-signal performance of the devices showed a current-gain cutoff frequency of 172 GHz and a maximum oscillation frequency of 206 GHz. These DC and RF device characteristics were superior to the best values reported for AlGaN (8 nm)/GaN HFETs with the same gate length.
- Japan Society of Applied Physicsの論文
- 2006-08-25
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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Higashiwaki Masataka
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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