Si-Ion Implantation Doping in \beta-Ga

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概要

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• We developed a donor doping technique for \beta-Ga<inf>2</inf>O<inf>3</inf>by using Si-ion (Si⁺) implantation. For the implanted Ga<inf>2</inf>O<inf>3</inf>substrates with \text{Si^{+}}=1\times 10^{19}{\mbox{--}}5\times 10^{19} cm^-3, a high activation efficiency of above 60% was obtained after annealing in a nitrogen gas atmosphere at a relatively low temperature of 900--1000 °C. Annealed Ti/Au electrodes fabricated on the implanted Ga<inf>2</inf>O<inf>3</inf>layers showed ohmic behavior. The Ga<inf>2</inf>O<inf>3</inf>with \text{Si^{+}}=5\times 10^{19} cm^-3showed the lowest specific contact resistance and resistivity obtained in this work of 4.6\times 10^{-6} \Omega\cdotcm²and 1.4 m\Omega\cdotcm, respectively.

• 2013-08-25

著者

• HIGASHIWAKI Masataka

  National Institute of Information and Communications Technology

• Yamakoshi Shigenobu

  Tamura Co. Ltd.

• Masui Takekazu

  Koha Co. Ltd.

• Sasaki Kohei

  Tamura Co. Ltd.

• Kuramata Akito

  Tamura Co. Ltd.

• Yamakoshi Shigenobu

  Tamura Corporation, Sayama, Saitama 350-1328, Japan

• Higashiwaki Masataka

  National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan

関連論文

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• Device-Quality β-GaO Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
• Device-Quality β-Ga_2O_3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
• Formation of Semi-Insulating Layers on Semiconducting \beta-Ga
• Si-Ion Implantation Doping in \beta-Ga
• High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
• \beta-Ga
• Formation of Semi-Insulating Layers on Semiconducting β-Ga₂O₃ Single Crystals by Thermal Oxidation
• Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"
• AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
• Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

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