Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
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概要
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We report on the barrier thickness dependence of the electrical properties and DC device characteristics of Al0.4Ga0.6N/GaN heterostructure field-effect transistors (HFETs). The HFET structures with 8–25-nm-thick AlGaN barrier layers were grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. All of the fabricated HFET devices with a gate length of 1 μm showed a good DC performance and an excellent pinch-off characteristic. The extrinsic transconductance of the HFET devices increased from 185 to 360 mS/mm with decreasing AlGaN barrier thickness from 25 to 8 nm, while the maximum drain current for a gate bias of $+1.0$ V decreased from 1.1 to 0.68 A/mm.
- Japan Society of Applied Physicsの論文
- 2004-09-15
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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Matsui Toshiaki
National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan
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