Matsui Toshiaki | National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan

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概要

• Matsui Toshiakiの詳細を見る
• 同名の論文著者
• National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japanの論文著者

関連著者

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• HIGASHIWAKI Masataka

  National Institute of Information and Communications Technology

• Matsui Toshiaki

  National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan

• Higashiwaki Masataka

  National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan

著作論文

• InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
• Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

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