High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators

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概要

• 論文の詳細を見る

• We proposed and fabricated AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using SiN/SiO2/SiN triple-layer insulators. The role of each insulator is as follows: The topmost SiN film mechanically supports the T-shaped gate, the middle SiO2 film, which is damaged during the dry etching of the topmost SiN film, can be wet-chemically etched, and the bottom SiN film stabilizes the AlGaN surface. Therefore, the proposed MIS-HEMTs are mechanically stable in the sub-50-nm-gate region and free from damage caused by dry etching. We obtained a cutoff frequency $ f_{\text{T}}$ of 139 GHz for a 45-nm-gate MIS-HEMT. This $ f_{\text{T}}$ is the highest value for AlGaN/GaN HEMTs grown by metal organic chemical vapor deposition. We also estimated the average electron velocity under the gate to be $2.4\times 10^{7}$ cm/s for a 120-nm-gate MIS-HEMT by transit time analysis.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Hirose Nobumitsu

  National Inst. Of Information And Communications Technology

• Matsui Toshiaki

  National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Endoh Akira

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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