Endoh Akira | Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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概要
- Endoh Akiraの詳細を見る
- 同名の論文著者
- Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japanの論文著者
関連著者
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ENDOH Akira
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Graduate School Of Engineering Science Osaka University
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MIMURA Takashi
Fujitsu Laboratories Lid.
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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Endoh Akira
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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WATANABE Issei
National Institute of Info. & Com. Tech.
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SHINOHARA Keisuke
National Institute of Info. & Com. Tech.
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Hirose Nobumitsu
National Inst. Of Information And Communications Technology
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Matsui Toshiaki
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Awano Yuji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Shinohara Keisuke
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Watanabe Issei
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Hikosaka Kohki
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Hiyamizu Satoshi
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
著作論文
- Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators