Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-02-28

著者

• Endoh Akira

  National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn

• MATSUI Toshiaki

  Communication Research Laborator

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Endoh A

  Fujitsu Lab. Ltd. Atsugi Jpn

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• Hikosaka K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• HIGASHIWAKI Masataka

  Communications Research Laboratory

• SHINOHARA Keisuke

  Communications Research Laboratory

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

• Higashiwaki M

  National Institute Of Information And Communications Technology

• Shinohara K

  National Institute Of Info. & Com. Tech.

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

関連論文

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• Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
• High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
• The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• Josephson Current in Microbridges of YBa_2Cu_3O_ Thin Films Prepared by CVD
• Bridge Type Josephson Junctions in MO-CVD Thin Films
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
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• Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
• Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
• Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
• Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
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• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
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• InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
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• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

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