Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-06-01

著者

• Tanuma Nobuhisa

  Meisei University

• YOKOKURA Saburo

  Meisei University

• HASHIGUCHI Sumihisa

  Yamanashi University

• MATSUI Toshiaki

  Communication Research Laborator

• TACANO Munecazu

  Meisei University

• Sikula Josef

  Technical University Of Brno

• YASUKAWA Satoshi

  Meisei University

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• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
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• Dielectric Measurements in the 60-GHz Band Using a High-Q Gaussian Beam Open Resonator
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors : Lateral Electron Density Distribution and Active Trap Position
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