Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• Tanuma Nobuhisa

  Meisei University

• TANIZAKI Hirokazu

  Meisei University

• YOKOKURA Saburo

  Meisei University

• HASHIGUCHI Sumihisa

  Yamanashi University

• SIKULA Josef

  Brno University of Technology

• MATSUI Toshiaki

  Communication Research Laborator

• TACANO Munecazu

  Meisei University

関連論文

• Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements
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• Bridge Type Josephson Junctions in MO-CVD Thin Films
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
• High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
• DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
• Millimeter Wave Antennas with Gaussian Radiation Patterns(Special Issue on Innovation in Antennas and Propagation for Expanding Radio Systems)
• Broadband Double-Layered Coplanar Patch Antennas for Microwave/Millimeter-Wave Wireless Communications (特集:超音速デバイスおよびミリ波デバイスとその回路技術)
• FDTD Analysis and Experiment of Fabry-Perot Cavities at 60GHz (Special Issue on Microwave and Millimeter Wave Technology)
• High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
• Dielectric Measurements in the 60-GHz Band Using a High-Q Gaussian Beam Open Resonator
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors : Lateral Electron Density Distribution and Active Trap Position
• Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements
• InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

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