High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
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概要
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High-quality indium nitride (InN) films were grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. The structural and electrical properties of the InN films were greatly improved by employing a buffer layer formed with a low-temperature-grown GaN intermediate layer and a low-temperature-grown InN layer. The surface morphology of the InN film was quite smooth - the root-mean-square roughness was less than 5 nm. The room-temperature Hall mobility was 1180 cm^2/V・s, and the residual electron concentration was 1.6 × 10^18 cm^<-3>. These results indicate that the InN film almost meets the requirements for application to practical devices.
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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MATSUI Toshiaki
Communication Research Laborator
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HIGASHIWAKI Masataka
Communications Research Laboratory
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Matsui Toshiaki
Communications Research Laboratory
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