HIGASHIWAKI Masataka | Communications Research Laboratory

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概要

• 同名の論文著者
• Communications Research Laboratoryの論文著者

関連著者

• MATSUI Toshiaki

  Communication Research Laborator

• HIGASHIWAKI Masataka

  Communications Research Laboratory

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Endoh Akira

  National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• Ikeda Keiji

  Fujitsu Laboratories Ltd.

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Endoh A

  Fujitsu Lab. Ltd. Atsugi Jpn

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Hikosaka K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• SHINOHARA Keisuke

  Communications Research Laboratory

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• Matsui Toshiaki

  Communications Research Laboratory

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

• Higashiwaki M

  National Institute Of Information And Communications Technology

• Shinohara K

  National Institute Of Info. & Com. Tech.

• Matsui Toshiaki

  Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Higashiwaki Masataka

  Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Ikeda Keiji

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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著作論文

• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
• High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

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