Ikeda Keiji | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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Ikeda Keiji
Fujitsu Laboratories Ltd.
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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MATSUI Toshiaki
Communication Research Laborator
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ENDOH Akira
Fujitsu Laboratories Ltd.
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MIMURA Takashi
Fujitsu Laboratories Lid.
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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HIGASHIWAKI Masataka
Communications Research Laboratory
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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Hiyamizu Satoshi
Graduate School Of Engineering Science Osaka University
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KENJO Atsushi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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Miyashita Toshihiko
Fujitsu Laboratories Ltd.
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Miyao Masanobu
Department Of Electronics Kyushu University
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KURATA Hajime
Fujitsu Laboratories Ltd.
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Ohyama Yasuhiro
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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Matsui Toshiaki
Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Kim Young
Fujitsu Laboratories, Ltd., 1500 Mizono, Tado, Kuwana, Mie 511-0192, Japan
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Nishikawa Masatoshi
Fujitsu Microelectonics, Ltd., 1500 Mizono, Tado, Kuwana, Mie 511-0192, Japan
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Ookoshi Katsuaki
Fujitsu Microelectonics, Ltd., 1500 Mizono, Tado, Kuwana, Mie 511-0192, Japan
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Hatada Akiyoshi
Fujitsu Microelectonics, Ltd., 1500 Mizono, Tado, Kuwana, Mie 511-0192, Japan
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Higashiwaki Masataka
Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Hatada Akiyoshi
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 193-0197, Japan
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Sadoh Taizoh
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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Ikeda Keiji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ikeda Keiji
Fujitsu Laboratories, Ltd., 1500 Mizono, Tado, Kuwana, Mie 511-0192, Japan
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Ikeda Keiji
Fujitsu Laboratories, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
著作論文
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Design and Optimization of Gate Sidewall Spacers to Achieve 45 nm Ground Rule for High-Performance Applications
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure