Shinohara K | National Institute Of Info. & Com. Tech.
スポンサーリンク
概要
関連著者
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Shinohara K
National Institute Of Info. & Com. Tech.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu S
Osaka Univ. Osaka Jpn
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Munakata F
Scientific Research Laboratory Nissan Motor Co. Ltd.
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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MUNAKATA Fumio
Materials Research Laboratory, Central Engineering Laboratories, Nissan Motor Co., Ltd.
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SHINOHARA Kazuhiko
Materials Research Laboratory, Central Engineering Laboratories, Nissan Motor Co., Ltd.
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YAMANAKA Mitsugu
Materials Research Laboratory, Central Engineering Laboratories, Nissan Motor Co., Ltd.
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Shinohara Kazuhiko
Materials Research Laboratory Nissan Research Center Nissan Motor Co. Ltd.
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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Shimomura S
Graduate School Of Science And Engineering Ehime University
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Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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ENDOH Akira
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Department of Materials Physics,Faculty of Engineering Science,Osaka University
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MIMURA Takashi
Fujitsu Laboratories Lid.
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Hikosaka K
Fujitsu Lab. Ltd. Kanagawa Jpn
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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Shinohara Keisuke
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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SHINOHARA Keisuke
Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Sciences
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Shinohara Keisuke
Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Science
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MATSUI Toshiaki
Communication Research Laborator
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Masu K
Research Institute Of Electrical Communication Tohoku University
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Masu Kazuya
Integrated Research Institute
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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Hiyamizu Satoshi
Fujitsu Limited
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Hiyamizu Satoshi
Graduate School Of Engineering Science Osaka University
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Masu Kazuya
東工大
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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SHIMIZU Yasuyuki
Department of Oral and Maxillofacial Radiology, School of Dentistry, Aichi-Gakuin University
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Kondo K
Fujitsu Laboratories Ltd.
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WATANABE Issei
National Institute of Info. & Com. Tech.
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SHINOHARA Keisuke
National Institute of Info. & Com. Tech.
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KITADA Takahiro
Osaka University
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SHIMOMURA Satoshi
Osaka University
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HIYAMIZU Satoshi
Osaka University
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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HIGASHIWAKI Masataka
Communications Research Laboratory
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SHINOHARA Keisuke
Graduate School of Engineering Science, Osaka University
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YAMASHITA Yoshimi
Communications Research Laboratory
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ENDOH Akira
Communications Research Laboratory
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HIKOSAKA Kohki
Communications Research Laboratory
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MATSUI Toshiaki
Graduate School of Engineering Science, Osaka University
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MIMURA Takashi
Communications Research Laboratory
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SHINOHARA Keisuke
Communications Research Laboratory
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Shimizu Yasuyuki
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Shimizu Yasuyuki
Department Of Civil Engineering Hokkaido University
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Tsubouchi K
Tohoku Univ. Sendai Jpn
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Hirosaki Naoto
National Institute For Materials Science
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Hirosaki Naoto
Nano Ceramics Center National Inst. For Materials Sci.
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Hirosaki N
Nissan Motor Co. Ltd. Yokosuka‐shi Jpn
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Hirosaki Naoto
Nano Ceramics Center National Institute For Materials Science
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Hirosaki Naoto
Nitride Particle Group Nano Ceramics Center National Institute For Materials Science (nims)
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Hirosaki Naoto
National Instutute For Materials Science
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Hirosaki Naoto
Advanced Materials Laboratory National Institute For Materials Science
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Beasley Malcolm
Department Of Applied Physics Stanford University
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KONDO Kaoru
RION CO., Ltd.
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ICHIJO Kazuo
RION CO., Ltd.
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SHINOHARA Keisuke
RION CO., Ltd.
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HOSHINA Tamio
RION CO., Ltd.
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Ichijo Kazuo
Rion Co. Ltd.
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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Munakata Fumio
Scientific Research Laboratory Nissan Motor Co. Ltd.
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Watanabe Issei
National Institute Of Information And Communications Technology (nict)
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Hoshina Tamio
Rion Co. Ltd.
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Hirosaki Naoto
Materials Research Laboratory Central Engineering Laboratories Nissan Motor Co. Ltd.
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Okada A
Kinki Univ. School Of Medicine Osaka Jpn
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KANESAKA Hiroyuki
Materials Research Laboratory, Central Engineering Laboratories, Nissan Motor Co., Ltd.
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OKADA Akira
Materials Research Laboratory, Central Engineering Laboratories, Nissan Motor Co., Ltd.
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Higashiwaki M
National Institute Of Information And Communications Technology
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Hirosaki Naoto
Advanced Materials Laboratory National Institute Of Materials Science
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Kitada Tadayoshi
Institute Of Technology And Science University Of Tokushima
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Yamanaka Mitsugu
Scientific Research Laboratory Nissan Motor Co. Ltd.
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Kanesaka Hiroyuki
Materials Research Laboratory Central Engineering Laboratories Nissan Motor Co. Ltd.
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SHINOHARA Kazuhiko
Scientific Research Laboratory, Nissan Motor Co., Ltd.
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MATIJASEVIC Vladimir
Applied Physics Department, TU Delft
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ROSENTHAL Peter
Department of Applied Physics, Stanford University
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HAMMOND Robert
Department of Applied Physics, Stanford University
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Hammond Robert
Department Of Applied Physics Stanford University
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Matijasevic Vladimir
Applied Physics Department Tu Delft
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Rosenthal Peter
Department Of Applied Physics Stanford University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
著作論文
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
- In-Situ Counting of Process-Induced Particles
- Compositional Effects on In Situ YBaCuO Films Grown at Low Oxygen Pressures
- Electrical Properties of YBa_2Cu_3O_y at High Temperatures
- Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy
- Electrical Properties of Bi_2Sr_2Ca_Y_xCu_2O_y at High Temperatures
- Preparation of Y-Ba-Cu-O Superconducting Thin Film by Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Electrical Properties of Eu_Ba_Cu_3O_y at High Temperatures : Electrical Properties Condensed Matter