Recovery of (411)A Superflat Interfaces in GaAs/Al_<0.3>Ga_<0.7>As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-08-15

著者

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• HIYAMIZU Satoshi

  Department of Materials Physics,Faculty of Engineering Science,Osaka University

• SHIMIZU Yasuyuki

  Department of Oral and Maxillofacial Radiology, School of Dentistry, Aichi-Gakuin University

• Shimizu Yasuyuki

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Shinohara Keisuke

  Department of Physical Science, Graduate School of Engineering Science, Osaka University

• Shimizu Yasuyuki

  Department Of Civil Engineering Hokkaido University

• Shinohara K

  National Institute Of Info. & Com. Tech.

• SHINOHARA Keisuke

  Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Sciences

• Shinohara Keisuke

  Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Science

関連論文

• Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
• High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
• Influence of X-ray Beam Angulation in the Detection of Proximal Caries : Interobserver Agreement in the CCD System
• Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
• Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
• Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
• Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
• Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
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• Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
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• DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
• Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
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• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
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• Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)
• Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy
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