830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2007-02-25
著者
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SHIMOMURA Satoshi
Graduate School of Engineering Science, Osaka University
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Shimomura S
Graduate School Of Science And Engineering Ehime University
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Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Hiyamizu S
Osaka Univ. Osaka Jpn
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OGURA Mutsuo
National Institute of Advanced Industrial Science and Technology
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Higuchi Yu
Graduate School Of Engineering Science Osaka University
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Kitada Tadayoshi
Institute Of Technology And Science University Of Tokushima
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OSAKI Shinji
Graduate School of Engineering Science, Osaka University
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SASAHATA Yoshifumi
Graduate School of Engineering Science, Osaka University
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KITADA Takahiro
Institute of Technology and Science, University of Tokushima
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HIYAMIZU Satoshi
Nara National College of Technology
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Osaki Shinji
Graduate School Of Engineering Science Osaka University
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Sasahata Yoshifumi
Graduate School Of Engineering Science Osaka University
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