AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
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概要
- 論文の詳細を見る
A gain-coupled distributed feedback (DFB) laser is realized using a high-density InGaAs/AlGaAs quantum wire (QWR) array formed within a finite area of $6\times 500$ μm by electron beam lithography and one-time selective metalorganic chemical vapor deposition (MOCVD). The stable gain-coupled DFB mode is confirmed at 812 and 830 nm from the 360 and 370 nm pitch gratings, respectively. The mode analysis of the actual cross-sectional structure using a finite element method verified that modal gain has a single peak at the Bragg wavelength of the grating.
- 2004-04-15
著者
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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OGURA Mutsuo
National Institute of Advanced Industrial Science and Technology
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YONEI Kenji
Shibaura Institute of Technology
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TAKASUKA Yasuyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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TSUJI Yasuhide
Hokkaido University
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Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Umezono, Tsukuba 305-8568, Japan
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Tsuji Yasuhide
Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Ogura Mutsuo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Umezono, Tsukuba 305-8568, Japan
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