Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
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概要
- 論文の詳細を見る
We have investigated the fabrication processes and device characteristics for n-channel triple-gate metal–oxide–semiconductor field-effect transistors (MOSFETs) on (100) silicon-on-insulator substrates. By optimizing the diagonal ion implantation conditions for the narrow fin channel, the fabricated triple-gate device showed an electron mobility almost compatible to a planar MOSFET with a supreme subthreshold slope of 64 mV/decade and drain induced barrier lowering (DIBL) of 15 mV/V.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
National Institute of Advanced Industrial Science and Technology
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TAKASHIMA Hidenori
National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
National Institute of Advanced Industrial Science and Technology
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SUGIMATA Etsurou
National Institute of Advanced Industrial Science and Technology (AIST)
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Matsukawa Takashi
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Masahara Meishoku
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Liu Yongxun
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Endo Kazuhiko
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Sugimata Etsurou
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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