TAKASHIMA Hidenori | National Institute of Advanced Industrial Science and Technology

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著作論文

Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching

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