TSUTSUMI Toshiyuki | Meiji University
スポンサーリンク
概要
関連著者
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
National Institute of Advanced Industrial Science and Technology
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TAKASHIMA Hidenori
National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
National Institute of Advanced Industrial Science and Technology
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TSUTSUMI Toshiyuki
Meiji University
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Masahara Meishoku
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Liu Yongxun
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Yamauchi Hiroshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Suzuki Eiichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Ishii Kenichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Takashima Hidenori
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Tsutsumi Toshiyuki
Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki-shi, Kanagawa 214-8571, Japan
著作論文
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors