ISHII Kenichi | National Institute of Advanced Industrial Science and Technology

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著作論文

Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process
Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process

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