Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-05-25
著者
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MASAHARA Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Ishikawa Yuki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
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ENDO Kazuhiko
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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LIU Yongxum
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SAKAMOTO Kunihiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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TSUKADA Junichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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YAMAUCHI Hiromi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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Yamauchi Hiromi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Sakamoto Kunihiro
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki Eiichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yamauchi Hiroshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tsukada Junichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute Aist
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Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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O'uchi Shin-ichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishii Kenichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ishii Kenichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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