Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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MASAHARA Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
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ENDO Kazuhiko
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Hosokawa Shinya
Institut Fur Physikalische- Kern- Und Makromolekulare Chemie Philipps Universitat Marburg
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TANOUE Hisao
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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HOSOKAWA Shinichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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NAITOU Yuichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Hosokawa Shinichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
National Institute Of Advanced Industrial Science And Technology (aist)
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