Formation of β-FeSi_2 Microstructures by Reactive Ion Etching Using SF_6 Gas

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2004-08-15

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Formation of β-FeSi_2 Microstructures by Reactive Ion Etching Using SF_6 Gas
Dependence of Hooge Parameter of Compound Semiconductors on Temperature
Formation of $\beta$-FeSi2 Microstructures by Reactive Ion Etching Using SF6 Gas
Arsenic Doping of $n$-Type $\beta$-FeSi2 Films by Sputtering Method

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