Dependence of Hooge Parameter of Compound Semiconductors on Temperature
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概要
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Voltage noise spectrum densities of quarter-micron filaments made by GaAs, InP and heterostructures are measured in detail as a function of decreasing temperature to 10 K, and the Hooge noise parameter α_H of each device is precisely determined at each temperature. Focused ion beam (FIB) implanted n-GaAs has the smallest α_H of 1.0×1.0^<-8> at 60 K, decreasing from 2×10^<-6> at room temperature. The derived value of α_H is the smallest one ever reported for compound semiconductor devices, and compares favorably with that expected from quantum 1/f noise theory. FIB-implanted n-InP has the smallest α_H of about 1×10^<-7> at 50 K. The α_H of a molecular beam epitaxially (MBE) grown In_<0.8>Ga_<0.2>As heterostructure depends on μ_<po> between 1 to 10 m^2/V・s, realizing 1/f noise in the cross section of optical phonon scattering.
- 社団法人応用物理学会の論文
- 1992-03-15
著者
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Tacano Munecazu
Electrotechnical Laboratory
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Tanoue H
National Institute Of Advanced Industrial Science And Technology (aist)
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Tanoue Hisao
Electrotechnical Laboratory
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