Doping of β-FeSi_2 Thin Film with Aluminum Prepared by Molecular Beam Epitaxy

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Fluorescence-Detected X-Ray Absorption Spectroscopy Applied to Structural Characterization of Very Thin Films;Ion-Beam-Induced Modification of Thin Ni Layers on Si(100)
Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
Doping of β-FeSi_2 Thin Film with Aluminum Prepared by Molecular Beam Epitaxy
Arsenic Doping of n-Type β-FeSi_2 Films by Sputtering Method
Boron Doping for p-Type β-FeSi_2 Films by Sputtering Method
Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate
Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
Development of Bipolar-pulse Accelerator for Intense Pulsed Ion Beam Acceleration
Formation of β-FeSi_2 Microstructures by Reactive Ion Etching Using SF_6 Gas
Dependence of Hooge Parameter of Compound Semiconductors on Temperature
Measurement of Glancing Incidence-Exit X-ray Scattering in Reflection High Energy Electron Diffraction and Total-Reflection-Angle X-ray Spectroscopy System
Formation of $\beta$-FeSi2 Microstructures by Reactive Ion Etching Using SF6 Gas
Arsenic Doping of $n$-Type $\beta$-FeSi2 Films by Sputtering Method

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