Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates (Special issue: Solid state devices and materials)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
- Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
- Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
- Device Design Consideration for V_-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
- Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
- Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
- Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- High-Density Recording Mechanism of Magnetooptieal Disks
- Investigation of low-energy tilted ion implantation for fin-type double-gate metal-oxide-semiconductor field-effect transistor extension doping (Special issue: Solid state devices and materials)
- Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates (Special issue: Solid state devices and materials)
- Ta/Mo stack dual metal gate technology applicable to gate-first processes (Special issue: Solid state devices and materials)