Device Design Consideration for V_<th>-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• MASAHARA Meishoku

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

• Maeda T

  Advanced Industrial Sci. And Technol. Ibaraki Jpn

• ENDO Kazuhiko

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

• MATSUKAWA Takashi

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

• SAKAMOTO Kunihiro

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

• SUZUKI Eiichi

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

• LIU Yongxun

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

• Suzuki E

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• SEKIGAWA Toshihiro

  Nanoelectronices Research Institute, National Institute of Advanced Science and Technology (AIST)

• Sekigawa Toshihiro

  Nanoelectronices Research Institute National Institute Of Advanced Science And Technology (aist)

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